1/6 ? p01 series sensitive 0.8a scrs september 2000 - ed: 3 main features: description thanks to highly sensitive triggering levels, the p01 scr series is suitable for all applications where available gate current is limited, such as ground fault circuit interruptors, pilot circuits in solid state relays, stand-by mode power supplies, smoke and alarm detectors. available in through-hole or surface mount pack- ages, the voltage capability of this series has been upgrated since its introduction, to reach 600 v. symbol value unit i t(rms) 0.8 a v drm /v rrm 400 and 600 v i gt 5to200 m a absolute ratings (limiting values) symbol parameter value unit i t(rms) rms on-state current (180 conduction angle) to-92 tl = 55 c 0.8 a sot-223 tamb = 70 c it (av) average on-state current (180 conduction angle) to-92 tl = 55 c 0.5 a sot-223 tamb = 70 c i tsm non repetitive surge peak on-state current tp = 8.3 ms tj = 25 c 8 a tp = 10 ms 7 i ti t value for fusing tp = 10ms tj = 25 c 0.24 a 2 s di/dt critical rate of rise of on-state current i g =2xi gt ,tr 100 ns f = 60 hz tj = 125 c50 a/ m s i gm peak gate current tp = 20 m s tj = 125 c1 a p g(av) average gate power dissipation tj = 125 c 0.1 w t stg tj storage junction temperature range operating junction temperature range - 40 to + 150 - 40 to + 125 c g a k to-92 (p01xxa) sot-223 (p01xxn)
p01 series 2/6 electrical characteristics (tj = 25 c, unless otherwise specified) thermal resistances s = copper surface under tab product selector symbol test conditions p01xx unit 02 11 18 i gt v d =12v r l = 140 w min. - 4 0.5 m a max. 200 25 5 v gt max. 0.8 v v gd v d =v drm r l = 3.3 k w r gk =1k w tj = 125 c min. 0.1 v v rg i rg =10 m a min. 8v i h i t =50ma r gk =1k w max. 5 ma i l i g = 1 ma r gk =1k w max. 6 ma dv/dt v d =67%v drm r gk =1k w tj = 125 c min. 75 80 75 v/ m s v tm i tm = 1.6 a tp = 380 m s tj = 25 c max. 1.95 v v t0 threshold voltage tj = 125 c max. 0.95 v r d dynamic resistance tj = 125 c max. 600 m w i drm i rrm v drm =v rrm = 400 v r gk =1k w tj = 25 c max. 1 m a v drm =v rrm = 600 v r gk =1k w 10 m a v drm =v rrm r gk =1k w tj = 125 cmax. 100 m a symbol parameter value unit r th(j-i) junction to case (dc) to-92 80 c/w r th(j-t) junction to tab (dc) sot-223 30 c/w r th(j-a) junction to ambient to-92 150 s=5cm sot-223 60 part number voltage sensitivity package 400 v 600 v P0102DA x 200 m a to-92 p0102dn x 200 m a sot-223 p0102ma x 200 m a to-92 p0102mn x 200 m a sot-223 p0111da x 25 m a to-92 p0111dn x 25 m a sot-223 p0111ma x 25 m a to-92 p0111mn x 25 m a sot-223 p0118da x 5 m a to-92 p0118dn x 5 m a sot-223 p0118ma x 5 m a to-92 p0118mn x 5 m a sot-223
p01 series 3/6 ordering information other information note : xx = sensitivity, y = voltage part number marking weight base quantity packing mode p01xxya 1aa3 p01xxya 0.2 g 2500 bulk p01xxya 2al3 p01xxya 0.2 g 2000 ammopack p0102yn 5aa4 p2y 0.12 g 1000 tape & reel p0111yn 5aa4 p1y 0.12 g 1000 tape & reel p0118yn 5aa4 p8y 0.12 g 1000 tape & reel fig. 1: maximum average power dissipation versus average on-state current. fig. 2-1: average and d.c. on-state current versus lead temperature. fig. 2-2: average and d.c. on-state current versus ambient temperature (device mounted on fr4 with recommended pad layout for sot-223). fig. 3: relative variation of thermal impedance junction to ambient versus pulse duration. p 01 02 d n 1aa3 sensitive scr series current: 0.8a sensitivity: 02: 200 m a 11: 25 m a 18: 5 m a voltage: d: 400v m: 600v package: a: to-92 n: sot-223 packing mode: 1aa3: to-92 bulk (preferred) 2al3: to-92 ammopack 5aa4: sot-223 tape & reel blank p(w) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 it(av)(a) tlead or ttab ( c) 1.1 1.0 0.9 0.7 0.8 0.5 0.6 0.1 0.4 0.3 0.2 0.0 02550 75 100 125 it(av)(a) 1.2 1.1 1.0 0.8 0.9 0.6 0.7 0.2 0.5 0.4 0.3 0.1 0 25 50 75 100 125 0.0 tamb( c) k = [zth(j-a)/rth(j-a)] tp(s) 1.00 0.10 0.01 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2
p01 series 4/6 fig. 4: relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). fig. 5: relative variation of holding current versus gate-cathode resistance (typical values). fig. 6: relative variation of dv/dt immunity versus gate-cathode resistance (typical values). fig. 7: relative variation of dv/dt immunity versus gate-cathode capacitance (typical values). fig. 8: surge peak on-state current versus number of cycles. fig. 9: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of i t. igt, ih, il[tj] / igt, ih, il[t] = 25 c 6 5 4 3 2 1 0 0 -20 -40 20 40 60 80 100 120 140 tj( c) ih[rgk]/ih[rgk=1k ] w rgk(k w) 0.4 0.6 0.8 1.0 0.2 1.6 1.8 2.0 1.2 1.4 dv/dt[rgk] / dv/dt[rgk=1k ] w rgk(k w) 0 0.1 1.0 10.0 dv/dt[cgk] / dv/dt[rgk=1k ] w 2 1 034 5 67 0 2 4 6 8 10 cgk(nf) 1 10 100 1000 0 1 2 3 4 5 6 7 8 itsm(a) non repetitive tj initial=25 c tamb=25 c repetitive numberofcycles onecycle tp=10ms itsm(a), i t(a s) 22 100.0 10.0 1.0 0.1 0.01 0.10 1.00 10.00 tp(ms)
p01 series 5/6 fig. 10: on-state characteristics (maximum values). fig. 11: sot-223 thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board fr4, copper thickness: 35 m m). w itm(a) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1e+1 1e+0 1e-1 1e-2 vtm(v) rth(j-a) ( c/w) s (cm ) 2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 130 120 110 100 90 80 70 60 50 40 30 20 10 0 package mechanical data to-92 (plastic) d f a e b a c ref. dimensions milli meters inches min. typ. max. min. typ. max. a 1.35 0.053 b 4.70 0.185 c 2.54 0.100 d 4.40 0.173 e 12.70 0.500 f 3.70 0.146 a 0.50 0.019
p01 series 6/6 footprint dimensions (in millimeters) sot-223 (plastic) package mechanical data sot-223 (plastic) a a1 b e1 d b1 h e e c v ref. dimensions millimeters inches min. typ. max. min. typ. max. a 1.80 0.071 a1 0.02 0.1 0.0008 0.004 b 0.60 0.70 0.85 0.024 0.027 0.034 b1 2.90 3.00 3.15 0.114 0.118 0.124 c 0.24 0.26 0.35 0.009 0.010 0.014 d 6.30 6.50 6.70 0.248 0.256 0.264 e 2.3 0.090 e1 4.6 0.181 e 3.30 3.50 3.70 0.130 0.138 0.146 h 6.70 7.00 7.30 0.264 0.276 0.287 v10 max information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2000 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco singapore - spain - sweden - swit zerland - united kingdom http ://www.st.com
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